Browsing by Author "Benlatreche, Mohamed Salah"

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Biomatériaux : Polycopié de cours destiné aux étudiants de L3 Génie Biomédical
(Faculté de Technologie : Département Ingénierie des Systèmes Électriques : Génie Biomédical, 2023) Benlatreche, Mohamed Salah
Caractérisation des dispositifs électroniques dans les technologies MOS avancées
(2013) Benlatreche, Mohamed Salah
Avec la miniaturisation à une échelle nanométrique, la compréhension des phénomènes thermodynamiques mis en jeux lors de la formation des siliciures tels que : (diffusion, réaction, ségrégation, redistribution et la cinétique de formation des phases) est primordiale. Le premier volet de notre travail consiste à développer un modèle thermodynamique basé sur la chaleur effective de formation. Ensuite nous avons suivi le comportement du dopant (l’Arsenic) au cours de formation des siliciures. Le dopant est stable lorsqu’il se trouve en position substitutionnelle et qui ne diffuse pas en tant qu’une espèce isolée. Ce qui nécessite des techniques de caractérisation fonctionnelles pour décrire ces défauts. Ce que nous avons fait dans le deuxième volet de notre travail qui consiste à appliquées la technique de caractérisation fonctionnelle de Tanner « Equilibrium Voltage Step (EVS) », qui nous a permis l'exploration de la concentration des pièges en oxyde à proximité de l’interface Si-SiO2, entre7إ et 17إ, qui convient à caractériser les défauts dans la structure MOS
Double-gate MOSFET model implemented in verilog-AMS language for the transient simulation and the configuration of ultra low-power analog circuits
(Polska Akademia Nauk, 2021) Smaani, Billel; Meraihi, Yassine; Nafa, Fares; Benlatreche, Mohamed Salah; Akroum, Hamza; Latreche, Saida
This paper deals with the implementation of a DC and AC double-gate MOSFET compact model in the Verilog-AMS language for the transient simulation and the configuration of ultra low-power analog circuits. The Verilog-AMS description of the proposed model is inserted in SMASH circuit simulator for the transient simulation and the configuration of the Colpitts oscillator, the common-source amplifier, and the inverter. The proposed model has the advantages of being simple and compact. It was validated using TCAD simulation results of the same transistor realized with Silvaco Software
Experimental investigation of Si-SiO 2 interface traps using equilibrium voltage step technique
(2011) Benlatreche, Mohamed Salah; Rahmoune, F.; Toumiat, O.
A new methodology of blood pressure measurement through the oscillometric method
(IOP Publishing, 2021) Chabane, Lilia; Omari, Tahar; Benlatreche, Mohamed Salah; Bereksi-Reguig, Fethi
Accurate measurement of blood pressure (BP) is of great importance in a medical diagnostic. It can be obtained by different methods. Nowadays, most BP devices use the oscillometric method which estimates systolic and diastolic BP through different algorithms. Unfortunately, the precision of these devices is always questioned and doctors prefer the use of traditional auscultatory-based methods. In this paper, a new oscillometric method for BP measurement is proposed. In fact, the proposed method is based on the design of a BP device which first detects and maintains the cuff pressure at the level of mean BP then the continuous determination of systolic and diastolic BP. device was assessed by measuring the systolic and diastolic BP on 20 healthy volunteers. The measured pressures were compared with those obtained by two commercially available BP devices. The results show a very high correlation coefficient (r = 0.97), an almost perfect agreement coefficient (kappa = 0.81), and a low mean absolute error (3.43 mmHg). The proposed methodology has a high probability to be complied with the Association for the Advancement of Medical Instrumentation and the British Hypertension Society (Grade A) standards, and can greatly improve the measurement of blood pressure using the oscillometric approach
Synthesis of nisi nanocrystals from ni films on si(111) substrates by low-temperature microwave annealing
(Inst Materials Physics, 2017) Benlatreche, Mohamed Salah; Boukhemis, O.; Smaili, K.; Bouaoina, B.
In this paper, we describe the formation of nickel silicide nanocrystals by physical vapor deposition of nickel on a Si(111) substrate and subsequent silicidation by microwave annealing at temperatures ranging from 250 to 350 °C. The thin films of Ni were deposited on Si(111) wafers at a pressure of 2 x 10-4 mbar. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) investigations revealed that the as-prepared NiSi nanocrystals are almost spherical with sizes in the range of 35 to 155 nm. The XRD patterns reveal the formation of NiSi and the presence of NiO. The chemical composition of the structure was determined by SEM with energy dispersive X-ray spectroscopy.