Browsing by Author "Benzerga, Ratiba"
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Item Gravimetric and differential thermal analysis of cullet-based glass foams(Trans Tech Publications, 2014) Ayadi, Azzedine; Benhaoua, F.; Le Gendre, Laurent; Benzerga, Ratiba; Stiti, N.Item Optimization of a rear system based on Titanium Nitride for a flexible CuInSe2 solar cell(2020) Messaid, Bachir Eddine; Claire, Le paven; Tala-Ighil, Razika; Benzerga, RatibaFlexible thin film solar cells represent the future. This study concentrates on making CuInSe2 based solar cells non rigid by depositing the rear molybdenum contact onto inox 316. In order to overcome the Inox316 disadvantages such as the metallic impurities diffusion and the surface roughness, a bi-layer TiN/Ti have been introduced between the Mo rear contact and Inox 316. Two techniques have been employed: spray pyrolysis for CuInSe2 and by cathodic magnetron sputtering for Mo/TiN/Ti. CuInSe2 layers deposited onto glass substrates present high crystallinity with (112) preferred orientation at 550 °C. However, these properties disappear for CuInSe2 on Inox316 with missing peak (112) and fall in the ratio Se/Cu from 1.9 to 1.1. According to EDS analysis, these results may be due to the Fe and Cu diffusion from Inox316 to CuInSe2 film, this is why the presence of TiN/Ti bi-layer improves the surface condition of Inox 316 and reduces Iron presence from 9.7 % to 1.9 % and Cr from 3.8 % to 0.5 %; this confirms its efficiency to improve the solar cell performance using Inox316 substrateItem Optimization of a rear system based on titanium nitride for a flexible CuInSe2 solar cell(Elsevier, 2020) Bachir Eddine, Messaid; LePaven, Claire; ZairTalaighil, Razika; Benzerga, Ratiba; LeGendre, Laurent; Marlec, Florent; Bensouici, FaycalItem Partial replacement in CISe solar cells of the molybdenum layer by an epitaxial Titanium Nitride thin film deposited onto MgO substrate(IOP Publiching, 2018) Messaid, Bachir Eddine; Le Paven, Claire; Tala-Ighil, Razika; Marlec, Florent; Benzerga, RatibaCurrently, Molybdenum represents the best rear contact used in thin film Solar Cells, based on chalcopyrites Cu(In,Ga)(S,Se)2 or CZTS for instance. However, its high price increases the solar cell cost and comes against the generalization of the photovoltaic energy. In order to overcome this fact, it is proposed in this work to replace partially Molybdenum by Titanium Nitride (TiN) in CuInSe2 Solar Cells. The TiN layers were deposited by radiofrequency magnetron sputtering with substrate temperature fixed at 25°C, 500°C or 700°C, for two RF powers (150W, 200W). It is found that the sample deposited at 700°C shows the optimal stoichiometry (Ti/N=0.95), with a good crystallinity, a texturation along the(h00) planes and an epitaxial growth confirmed by phi-scans. The introduction of TiN in the rear contact requires the deposition of a thin Titanium layer as a buffer layer to improve the adherence of the TiN film. After analyzing the TiN/Ti/MgO structure, it is found that the Ti intermediate layer doesn’t affect the TiN crystalline orientation, the stoichiometry remains close to 1 (Ti/N=0.94) in addition with a homogenous morphological surface
