Effect of temperature on the Fowler-Nordheim barrier height, flat band potentials and electron/hole effective masses in the MOS capacitors
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Date
2020
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Elsevier
Abstract
The current voltage characteristics versus temperature were measured in MOS (Metal Oxide Semiconductor) capacitor structures in the range of [303−423] K. These measurements were investigated by Fowler-Nordheim (FN) tunneling current characterized by the FN parameters like: the effective mass of the charge carrier in the oxide mox, the effective mass of the charge carrier in the semiconductor msc, the barrier height of the charge carriers ϕB and the corrected oxide voltage Vcorr. Our process enabled us a simultaneous extraction of the four FN parameters (mox, msc, ϕB, Vcorr) for each temperature by means of an optimization method using just these measured current-voltage curves. This parameters extraction made a possible study of mox, msc, ϕB and Vcorr evolution with the temperature. We have found a decrease of both mox and msc with the increase of temperature that could provide us with an oxide with a charge carrier of low effective mass
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Keywords
Metal-oxide-semiconductor, Fowler-Nordheim tunneling-temperature effect, FN parameters (mox, msc, ϕB,Vcorr) simultaneously extracted, Flat band voltage VFB, Surface potential ψS, Vertical optimization method