Synthesis of nisi nanocrystals from ni films on si(111) substrates by low-temperature microwave annealing

Abstract

In this paper, we describe the formation of nickel silicide nanocrystals by physical vapor deposition of nickel on a Si(111) substrate and subsequent silicidation by microwave annealing at temperatures ranging from 250 to 350 °C. The thin films of Ni were deposited on Si(111) wafers at a pressure of 2 x 10-4 mbar. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) investigations revealed that the as-prepared NiSi nanocrystals are almost spherical with sizes in the range of 35 to 155 nm. The XRD patterns reveal the formation of NiSi and the presence of NiO. The chemical composition of the structure was determined by SEM with energy dispersive X-ray spectroscopy.