FABRICATION AND CHARACTERIZATION OF CuInSe 2 THIN FILM SOLAR CELLS WITH FLUORINE DOPED ZnO AS NEW BUFFER LAYER

Abstract

Copper indium diselenide CuInSe2(CISe) thin films are very important semiconductor material for solar cell applications.In this study, CuInSe2 (CIS), and Fluorine doped ZnO (ZnO:F) thin films were electrodeposited from aqueous solutions consisting of CuCl2, InCl3,and SeO2with Na-citrate as complexing agents onto Fluorine doped tin oxide (FTO)substratesfor CuInSe2 ,and ZnCl2,NH4F were used as sources of ZnO and fluorine doping respectively. The microstructures, morphologies, and optical properties of the CuInSe2 With new buffer layer fluorine doped ZnO (FZO) were characterized. X -ray diffraction analysis showed that all the films CuInSe2 are tetragonal chalcopyrite with favored orientation along (112) direction and Cu:In:Se crystals are nearly 1:1:2 atomic ratio. The surface morphology of all layers were void free, compact and fairly uniform. The near stoichiometries CuInSe2 film (annealing at 350°C), has the optical band gap of 1.05 eV. Such a band gap is highly beneficial for the solar cell application .