Preparation and characteristic of low resistive zinc oxide thin films using chemical spray technique for solar cells application

dc.contributor.authorSali, S.
dc.contributor.authorBoumaour, Messaoud
dc.contributor.authorTala-Ighil, Razika
dc.date.accessioned2021-02-18T06:53:19Z
dc.date.available2021-02-18T06:53:19Z
dc.date.issued2008
dc.description.abstractIn this paper, we present results concerning undoped and indium-doped zinc oxide (ZnO: In) thin films were grown on glass and Si substrates using the chemical spray technique. The effects of thickness (e), as well as the substrate temperature (Ts), were studied. It was revealed by X-Ray diffraction that the preferred orientation of polycrystals is along C-axis, with hexagonal wurtzite structure. Two important facts were calculated from RBS measurements: the dopant concentration throughout the film and the thickness of the films, it was found that the thickness increase with time of deposition. Under optimum deposition conditions a low resistivity and a high optical transmittance of the order of 2.8 × 10−4 Ω cm and 85 %, respectively, were obtained.en_US
dc.identifier.issn1112-2242
dc.identifier.urihttps://dspace.univ-boumerdes.dz/handle/123456789/6449
dc.language.isoenen_US
dc.relation.ispartofseriesRevue des Energies Renouvelables CICME’08 Sousse (2008);pp. 201 - 207
dc.subjectSpray depositionen_US
dc.subjectZnOen_US
dc.subjectDopingen_US
dc.subjectXRDen_US
dc.subjectRBSen_US
dc.subjectTransmittanceen_US
dc.titlePreparation and characteristic of low resistive zinc oxide thin films using chemical spray technique for solar cells applicationen_US
dc.typeArticleen_US

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