Xu, YubingWang, XinPan, YuzhuChai, ShunJieWu, JieWang, MengrouPerveen, AbidaOnwudiwe, Damian ChineduTalaighil, Razika ZairBae, Byung SeongZhu, YingChen, JingLei, Wei2024-02-282024-02-2820232166-532Xhttps://doi.org/10.1063/5.0180460https://pubs.aip.org/aip/apm/article/11/12/121110/2930304/Bismuth-doping-induced-red-shifted-spectralhttps://dspace.univ-boumerdes.dz/handle/123456789/13610Perovskite single crystals (PSCs) photodiodes with p-n junctions have been widely studied due to their effective blocking of injected current with barriers and quickly separating the electrons and hole pairs with a built-in electric field. Here, we report a solution-processed epitaxial (SPE) growth method to fabricate p-n photodiodes based on MAPbBr3 PSCs. In the structure of the MAPbBr3 PSCs, bismuth donor doping will change the conduction type from p-type to n-type and redshift the absorption edge along with the increase in Bi concentration. Therefore, this work successfully fabricates the p-n photodiodes with homo-epitaxial Bi-doped (n-type) MAPbBr3 layers grown on the surface of undoped (p-type) MAPbBr3 PSCs substrates through the SPE growth method. The p-n photodiodes achieve a tunable spectral response by simply adjusting the Bi doping concentrations of homo-epitaxial MAPbBr3 layers. The spectral response peaks redshift from 559 to 601 nm, with an increasing Bi doping level of 0% to 15%.enDopingP-N junctionsPhotodiodesFpitaxyPerovskitesBismuthArticle