Tahanout, CherifaTahi, HakimBouchera, NadjiHocini, Lotfi2021-01-202021-01-2020192168-1724https://doi.org/10.1080/21681724.2019.1625961https://www.tandfonline.com/doi/full/10.1080/21681724.2019.1625961https://dspace.univ-boumerdes.dz/handle/123456789/6191In this paper, we investigate the negative bias temperature instability(NBTI) on conventional P-type metal-oxide-semiconductorfield effecttransistors (PMOSFET) using on-fly bulk trap technique (OTFBT). Theextracted NBTI induced interface (ΔNit)andoxidetraps(ΔNot), usingOTFBT, are modelled and used to simulate the NBTI effect on N-typesuspended gate metal-oxide-semiconductor devices (N-type SG-MOS),which could be manufactured by thesamefabricationprocessasconventional PMOSFET. The used approach to simulate the NBTI effectis performed by combining, in the same simulation program, theN-type SG-MOS devices model with the NBTI inducedΔNitandΔNotmodels. This approach allowed us to simulate and predict rapidly thelifetime of the N-type SG-MOS devices subjected to the NBTI degrada-tion. The simulation shows that the degradation of N-type SG-MOSdevices due to the NBTI is the same as that of conventional PMOSFET.However, the extracted lifetime of N-type SG-MOS devices (stiction ofthe suspended gate) is longer than that of conventional PMOSFET.enMEMSNBTI degradationN-type SG-MOS devicesArticle