Nadji, Bécharia2015-04-212015-04-2120070924-0136https://dspace.univ-boumerdes.dz/handle/123456789/414The anodic silica films were produced by anodization of monocrystalline silicon wafers in pure water in an electrolysis cell (P.T.F.E), with a constant current density of 20 μA/cm2. All anodizations are performed at room temperature. During oxidation film thickness increases linearly as a function of total charge. Films were annealed under nitrogen atmosphere at various temperatures (600, 800 and 1050 °C). MOS capacitors with anodic oxides were elaborated. This study deals to the determination of interface states density Si/SiO2 and the study of electronic conduction. Using static, quasi-static, C(V), G(ω) measurements, we have determined the interface states density, fixed charges density for annealed oxides at various temperatures. The conduction mechanism was determined with I(V) measurementsenFowler–Nordheim conductionMOS capacitorsInterface states density,Electrical characterisationPure waterAnnealing oxidationArticle