Tahi, HakimBenmessai, KarimLe Floch, Jean MichelBoubaaya, MohamedTahanout, CherifaDjezzar, BoualemBENABDELMOMENE, AbdelmadjidGoudjil, MohamedChenouf, Amel2021-01-202021-01-202014INSPEC Accession Number: 14951793DOI: 10.1109/IIRW.2014.7049530https://ieeexplore.ieee.org/document/7049530https://dspace.univ-boumerdes.dz/handle/123456789/6188In this paper, we report an experimental evidence of the impact of applied a low magnetic field (B<;100 Gauss) during negative bias temperature instability (NBTI) stress and recovery, on commercial power double diffused MOS transistor (VDMOS). We show that both interface (ΔN it ) and oxide trap (ΔN ot ) induced by NBTI stress decrease by applied magnetic field. This decrease is more pronounced as the magnetic field is high. In addition, the recovery of NBTI induced threshold voltage shift (ΔV th ) is relatively important with applied magnetic field.enunder magnetic fieldNBTI degradationpower VDMOSArticle