Dhia Elhak, MessaoudZitouni, AbdelkaderDjezzar, BoualemBenabdelmoumene, AbdelmadjidZatout, Boumediene2021-02-242021-02-242020https://dspace.univ-boumerdes.dz/handle/123456789/6517In this paper, we implemented the fast I ds - V gs technique to get the entire characteristic of p-MOSFET devices; as fast as possible. This technique is used within MSM protocol under NBTI conditions. We reached 10μs in measurement time; a stress-measure delay (switching time) of about a hundred of milliseconds was reached. However, strengths and weaknesses of the technique have been discussed. Furthermore, Transconductance (g m ), subthreshold slope (SS) and mid-gap (MG) methods have also been implemented and discussed. NBTI parameter i.e. ΔV th , n, y and E a are extracted and compared to other results. A time exponent n of 0.149 has been touched. Activation energy E a = 0.039 eV and a field factor y = 0.41 MV. cm -1 for a stress time t s <; 10s have been obtainedenMOSFET reliabilityFast characterizationExtraction methodsOther