Dehmas, MokraneAzrar, A.Recioui, AbdelmadjidChallal, Mouloud2015-06-252015-06-2520092009 International Conference on Advances in Computational Tools for Engineering Applications, ACTEA 2009; Beirut; Lebanon; 15 July 2009 through 17 July 2009; Category numberCFP0945G; Code 78008978-142443834-1https://dspace.univ-boumerdes.dz123456789/2101In this work, the developed mathematical extension of the semi analytical Method of Lines (MoL) for the solution of Poisson's equation which governs the voltage distribution within semiconductor devices is adapted to fit realistic considerations related to the geometry and the electrodes configuration of such structures. The obtained tool is then applied to find the potential profile within a MOS capacitor in deep depletion modeenDeep depletionMathematical extensionsNumerical approachesPhysical modelingPoisson's equationPotential profilesSemi-analytical methodsVoltage distributionModelsMOS capacitorsPoisson distributionSemiconductor device manufactureSemiconductor switchesSemiconductor device structuresArticle