Mokhtari, FaizaBouabdallah, AhceneMerah, AbdelkrimZizi, M.Hanchi, S.Alemany, A.2018-02-252018-02-2520100232-1300https://dspace.univ-boumerdes.dz/handle/123456789/4560enCrystal growthCzochralskiSiliconModified geometryPressure fieldFluent softwareThree-dimensional study of the pressure field and advantages of hemispherical crucible in silicon Czochralski crystal growthArticle