Bencherif A.Bousbiat E.Bouraiou A.Meglali O.Zoukel A.Derkaoui K.2026-02-05202509214526https://doi.org/10.1016/j.physb.2025.417611https://dspace.univ-boumerdes.dz/handle/123456789/16050In this study, ZnS-ZnO composite thin films were developed as alternative buffer layers to CdS and ZnS for second-generation solar cells. ZnO thin films were initially deposited on indium tin oxide (ITO) substrates using the electrodeposition method, followed by sulfurization in sealed glass capsules containing sulfur powder at two different temperatures (500 °C and 550 °C) under an argon-neon atmosphere. The structural, compositional, morphological, and optical properties of the synthesized films were analyzed using grazing incidence X-ray diffraction (GIXRD), energy-dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM), Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS). X-ray diffraction confirmed the coexistence of both ZnS and ZnO phases, and showed that the proportion of the ZnS phase increases with rising sulfurization temperature. The preferred mechanism for ZnS phase formation is the reaction of ZnO with gaseous sulfur. The Raman spectra of both films sulfurized at 500 °C and 550 °C are nearly identical, displaying the characteristic peaks of ZnS and ZnO. Additionally, ZnS within the composite films is under tensile strain. SEM images reveal that the samples exhibit a highly uniform, homogeneous, and pore-free surface, while XPS confirms the chemical states of Zn, S, and O. These ZnS-ZnO composites exhibit superior structural and optical properties, making them a promising environmentally friendly alternative for buffer layers in chalcogenide solar cellsenBuffer layerElectrodepositionSulfurizationZnS-ZnO compositeArticle