Nadji, Becharia2016-02-032016-02-03200709240136https://dspace.univ-boumerdes.dz/handle/123456789/2647enAnnealing oxidationFowler-Nordheim conductionInterface states densityElectrical characterisationMOS capacitorsPure waterInvestigation and study of the electrical characteristics of anodic oxide films SiO2 annealed at various temperaturesArticle