Oxide trap annealing by H2 cracking at e'center under NBTI stress

Tahanout, CherifaNadji, BechariaTahi, HakimDjezzar, BoualemBenabdelmoumene, AbdelmadjidChenouf, Amel2016-03-072016-03-072012https://dspace.univ-boumerdes.dz/handle/123456789/2757enMOSFETAnnealingHole trapsHydrogenNegative bias temperature instabilitySemiconductor device modelsSemiconductor device reliabilityOxide trap annealing by H2 cracking at e'center under NBTI stressOther