Merah, Sidi MohammedNadji, B.Tahi, H.2015-11-082015-11-08201500262714https://dspace.univ-boumerdes.dz/handle/123456789/2402enMagnetic fieldNBTIVDMOSFETDegradationMagnetic fieldsDouble diffused MOS transistorLife-timesLow magnetic fieldsNegative bias temperature instabilityVDMOS devicesLow magnetic field Impact on NBTI degradationArticle