Sali, S.Boumaour, MessaoudTala-Ighil, Razika2021-02-182021-02-1820081112-2242https://dspace.univ-boumerdes.dz/handle/123456789/6449In this paper, we present results concerning undoped and indium-doped zinc oxide (ZnO: In) thin films were grown on glass and Si substrates using the chemical spray technique. The effects of thickness (e), as well as the substrate temperature (Ts), were studied. It was revealed by X-Ray diffraction that the preferred orientation of polycrystals is along C-axis, with hexagonal wurtzite structure. Two important facts were calculated from RBS measurements: the dopant concentration throughout the film and the thickness of the films, it was found that the thickness increase with time of deposition. Under optimum deposition conditions a low resistivity and a high optical transmittance of the order of 2.8 × 10−4 Ω cm and 85 %, respectively, were obtained.enSpray depositionZnODopingXRDRBSTransmittanceArticle