Experimental investigation of the charge pumping current in integrated MOS transistors

Rahmoune, Fayçal2015-06-102015-06-101998https://dspace.univ-boumerdes.dz123456789/155080 p. : ill. ; 30 cmThe aim of this work is the investigation of the charge pumping technique through the variation of the gate voltage pulse width. The main part of this work is related to the investigation of the carge pumping current of MOSFETS and its dependence on the time and voltage parameters of the input gate pulses…enMOS (électronique)Metal oxide semiconductorsExperimental investigation of the charge pumping current in integrated MOS transistorsThesis