Toumi, S.Ouennoughi, Z.Weiss, R.2021-09-192021-09-192021094783961432-0630 Electronichttps://dspace.univ-boumerdes.dz/handle/123456789/7114https://link.springer.com/article/10.1007/s00339-021-04787-0DOI 10.1007/s00339-021-04787-0The temperature dependence of the electrical properties of the Schottky barrier contact W/4H-SiC is studied in term of the Werner’s model assuming a Gaussian distribution of the barrier height to model the inhomogeneity of the Schottky interface. The Gaussian distribution is characterized by the parameters ϕ¯ B as a mean barrier height, ρ2, ρ3 as coefficients quantifying the barrier deformation and σs as a standard deviation. The effect of the series resistance Rs and its relation with the standard deviation σs is also reported. A vertical optimization process is used to extract simultaneously all the parameters cited above as function of temperature from the forward current–voltage (I-V) characteristics at temperatures ranging from 303 to 448 K. The temperature dependence of the characterized parameters of the W/4H-SiC Schottky structure enables us to quantify the inhomogeneity state of the Schottky barrier height prevailing at the MS interface in terms of those extracted parameters. © 2021, The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer NatureenMetal–Semiconductor interface inhomogeneityW/4H-SiCT0-effectBarrier’s height parameters 𝜙B0 , ρ2, ρ3, σs, Rs)Vertical optimization methodArticle