Browsing by Author "Bouchera, Nadji"

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    Simple and fast simulation approach to investigate the NBTI effect on suspended gate MOS devices
    (2019) Tahanout, Cherifa; Tahi, Hakim; Bouchera, Nadji; Hocini, Lotfi
    In this paper, we investigate the negative bias temperature instability(NBTI) on conventional P-type metal-oxide-semiconductorfield effecttransistors (PMOSFET) using on-fly bulk trap technique (OTFBT). Theextracted NBTI induced interface (ΔNit)andoxidetraps(ΔNot), usingOTFBT, are modelled and used to simulate the NBTI effect on N-typesuspended gate metal-oxide-semiconductor devices (N-type SG-MOS),which could be manufactured by thesamefabricationprocessasconventional PMOSFET. The used approach to simulate the NBTI effectis performed by combining, in the same simulation program, theN-type SG-MOS devices model with the NBTI inducedΔNitandΔNotmodels. This approach allowed us to simulate and predict rapidly thelifetime of the N-type SG-MOS devices subjected to the NBTI degrada-tion. The simulation shows that the degradation of N-type SG-MOSdevices due to the NBTI is the same as that of conventional PMOSFET.However, the extracted lifetime of N-type SG-MOS devices (stiction ofthe suspended gate) is longer than that of conventional PMOSFET.