Browsing by Author "Boumaour, M."

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Effet du recuit de la métallisation par sérigraphie sur les propriétés optiques des couches minces de ZnO déposées par spray
(2009) Belkhalfa, H.; Tala-Ighil, Razika; Sali, S.; Kermadi, S.; Sili, S.; Boumaour, M.; Tayour, F.; Ait Amar, F.; Si Ahmed, Y.
L’oxyde de zinc est parmi les oxydes transparents et conducteurs les plus prometteurs dans le domaine du photovoltaïque. En effet, il joue le rôle de fenêtre optique permettant de capter plus de photons. Le présent travail consiste à étudier et comprendre le comportement du ZnO déposé par spray pyrolyse, avec le recuit de frittage à hautes températures de la métallisation par sérigraphie. La métallisation par sérigraphie est la technique de fabrication par excellence de cellules solaires à l’échelle industrielle. On se focalise surtout sur les propriétés optiques à partir des spectres de réflexion et de transmission par l’emploi de la méthode de Mueller. Après analyse des résultats, on remarque que l’énergie de gap du ZnO décale vers les basses énergies avec le recuit. Elle démarre de 3,49 eV pour l’échantillon sans recuit à 3,26 eV pour l’échantillon recuit à 900 °C
Electrical and morphological study of screen printed silicon solar cells contacts
(2012) Tala-Ighil, Razika; Chelli, F.; Sali, S.; Oussalah, S.; Boumaour, M.; Tayour, F.; Si-Ahmed, Y.
The screen printed contact quality influences directly the mono-crystalline silicon solar cells efficiency. This is the aim of this study. A batch of mono-crystalline silicon wafers have undergone all the technological processes such as chemical cleaning, phosphorus diffusion and finally screen printing metallization. According to the used silver paste technical data, the firing temperature should not be greater than 750°C. This is why for this last step, a temperature swept from 650°C to 750°C has been carried out. The principal purpose of this work is to evaluate the Ag/N+ front contact quality by identifying the specific contact resistance, the resistivity and the morphology of each temperature profile. Transmission line method (TLM) is used as the technique for photovoltaic electrical characterization. It has been found that the best annealing temperature profile is750°C which corresponds to the lowest specific contact resistivity value of 1.65 mcm2. Morphological study shows low contact porosity at 750°C which reflects its good quality
High temperature annealing of sprayed SnO2 : F layers in a silicon solar cell process with screen-printed contacts
(2006) Tala-Ighil, Razika; Boumaour, M.; Belkaid, M.S.; Mallemi, A.; Melhani, K.; Iratni, A.
In order to improve the solar cell conversion efficiency, a thin film of doped tin oxide (SnO2: F) has been deposited by the spray-pyrolysis technique on a monocrystalline diffused silicon wafer. Subsequently, the layer must undergo the firing step of screen-printed contacts with temperatures up to 830 °C. After annealing, one notices with the naked eye the appearance of speckles disturbing the uniformity of the as-deposited blue-coloured SnO2:F. Characterizations such as XPS, FTIR, RBS, XRD, SEM, Hall Effect, four point probe...etc, are all consistent to reveal a net increase of the SnO2:F layer resistivity which leads to efficiency degradation. Annealing the thin films under CO and 90% N2–10% H2 atmospheres was investigated to seek possibilities to preserve the expected improvements. Unlike forming gas, CO reducing ambient was found to be very effective for the high temperature contact firing with no thin film conductivity deterioration
Influence of the organic solvents on the properties of the phosphoric acid dopant emulsion deposited on multicrystalline silicon wafers
(2007) Bouhafs, D.; Moussi, A.; Boumaour, M.; Abaidia, Seddik-El-Hak; Mahiou, L.; Messaoud, A.
This study is devoted to the formation of an n+p emitter for multicrystalline silicon (mc-Si) solar cells for photovoltaic (PV) application. The atomization technique has been used to make the emitter from H3PO4 phosphoric acid as a doping source. The doping emulsion has been optimized using several organic solvents. H3PO4 was mixed with one of these solutions: ethanol, 2-butanol, isopropanol alcohol and deionized water. The volume concentration of H3PO4 does not exceed 20% of the total volume emulsion. The deposit characteristics of the emulsion change with the organic solvent. H3PO4 : 2-butanol gives the best deposited layer with acceptable adherence and uniformity on silicon surface. Fourier transform infrared characterizations show the presence of organic and mineral phosphorous bonds in the formed layer. The obtained emitters are characterized by a junction depth in the range 0.2–0.75μm and a sheet resistance of about 10–90 / . Such a low cost dopant source combined with a continuous spray process can effectively reduce the cost per Wp of the PV generator
Mesure statistique de la résistance de contact d’une grille sérigraphiée pour cellules solaires au silicium multicristallin
(2010) Chelli, F.; Tala-Ighil, Razika; Sali, S.; Si-Ahmed, Y.; Oussalah, S.; Tayour, F.; Boumaour, M.
N+ silicon solar cells emitters realized using phosphoric acid as doping source in a spray process
(2006) Bouhafs, D.; Moussi, A.; Boumaour, M.; Abaidia, Seddik-El-Hak; Mahiou, L.
The spray technique is used to realize the n+ emitter from phosphoric acid H3PO4 as a doping source. Emulsions have been prepared using several organic solvents. It was found that H3PO4:2-butanol mixture provides the most uniform deposited layer. The sheet resistance and the n+ profile were measured with a four point probe and the Hall profiling, respectively. The variety of emitters obtained are characterized by a sheet resistance ranging from 10 to 86 Ω/□ and a junction depth of about 0.2 to 0.7 μm which can be adequate for emitters in a polycrystalline silicon solar cell process