Browsing by Author "Mahrane, A."

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    Analytical study on the temperature dependence of InGaN p–n junction solar cell under concentrated light intensity
    (Springer, 2017) Mesrane, Abdelfettah; Mahrane, A.; Rahmoune, F.; Oulebsir, A.
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    Design and simulation of InGaN p-n junction solar cell
    (Hindawi Publishing Corporation, 2015) Mesrane, Abdelfettah; Rahmoune, F.; Mahrane, A.; Oulebsir, A.
    The tunability of the InGaN band gap energy over a wide range provides a good spectral match to sunlight, making it a suitable material for photovoltaic solar cells. The main objective of this work is to design and simulate the optimal InGaN single-junction solar cell. For more accurate results and best configuration, the optical properties and the physical models such as the Fermi-Dirac statistics, Auger and Shockley-Read-Hall recombination, and the doping and temperature-dependent mobility model were taken into account in simulations. The single-junction In0.622Ga0.378N (Eg = 1.39 eV) solar cell is the optimal structure found. It exhibits, under normalized conditions (AM1.5G, 0.1 W/cm2, and 300 K), the following electrical parameters: J sc = 32.6791 mA/cm2, V oc = 0.94091 volts, FF = 86.2343%, and η = 26.5056 %. It was noticed that the minority carrier lifetime and the surface recombination velocity have an important effect on the solar cell performance. Furthermore, the investigation results show that the In0.622Ga0.378N solar cell efficiency was inversely proportional with the temperature
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    Theoretical Study and Simulations of an InGaN Dual-Junction Solar Cell
    (Springer link, 2016) Mesrane, Abdelfettah; Mahrane, A.; Rahmoune, F.; Oulebsir, A.
    This study aims to determine the optimal configuration of the dual-junction InGaN solar cell. Several parameters of the dual-InGaN-junction solar cell have been investigated as the band gap combination and the thicknesses of the layers. Physical models and the optical properties of the InxGa1−xN according to the indium content have been used. The dual-junction solar cell has been designed and simulated for each chosen band gap combination. The current densities drawn from the sub-cells were matched by adjusting their emitter layers thicknesses. The best conversion efficiency obtained for the optimized dual-junction In0.49Ga0.51N/In0.74Ga0.26N solar cell, under standard conditions, was 34.93% which corresponds to the band gap combination of 1.73 eV/1.13 eV. The short-circuit current density and the open circuit voltage obtained from the tandem cell In0.49Ga0.51N/In0.74Ga0.26N are respectively, 21.3941 mA/cm2 and 1.9144 V. The current mismatch was 0.057%. The effects of the front and back layers thicknesses of the top and bottom cells on the efficiency were also studied. Furthermore, the electrical characteristics of the dual-junction solar cell and its sub-cells were also discussed