Browsing by Author "Moussi, A."

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    Influence of the organic solvents on the properties of the phosphoric acid dopant emulsion deposited on multicrystalline silicon wafers
    (2007) Bouhafs, D.; Moussi, A.; Boumaour, M.; Abaidia, Seddik-El-Hak; Mahiou, L.; Messaoud, A.
    This study is devoted to the formation of an n+p emitter for multicrystalline silicon (mc-Si) solar cells for photovoltaic (PV) application. The atomization technique has been used to make the emitter from H3PO4 phosphoric acid as a doping source. The doping emulsion has been optimized using several organic solvents. H3PO4 was mixed with one of these solutions: ethanol, 2-butanol, isopropanol alcohol and deionized water. The volume concentration of H3PO4 does not exceed 20% of the total volume emulsion. The deposit characteristics of the emulsion change with the organic solvent. H3PO4 : 2-butanol gives the best deposited layer with acceptable adherence and uniformity on silicon surface. Fourier transform infrared characterizations show the presence of organic and mineral phosphorous bonds in the formed layer. The obtained emitters are characterized by a junction depth in the range 0.2–0.75μm and a sheet resistance of about 10–90 / . Such a low cost dopant source combined with a continuous spray process can effectively reduce the cost per Wp of the PV generator
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    N+ silicon solar cells emitters realized using phosphoric acid as doping source in a spray process
    (2006) Bouhafs, D.; Moussi, A.; Boumaour, M.; Abaidia, Seddik-El-Hak; Mahiou, L.
    The spray technique is used to realize the n+ emitter from phosphoric acid H3PO4 as a doping source. Emulsions have been prepared using several organic solvents. It was found that H3PO4:2-butanol mixture provides the most uniform deposited layer. The sheet resistance and the n+ profile were measured with a four point probe and the Hall profiling, respectively. The variety of emitters obtained are characterized by a sheet resistance ranging from 10 to 86 Ω/□ and a junction depth of about 0.2 to 0.7 μm which can be adequate for emitters in a polycrystalline silicon solar cell process