Browsing by Author "Nadji, Bécharia"

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    Effect of post-oxidation annealing on the electrical properties of anodic oxidized films in pure water
    (2005) Nadji, Bécharia
    The work presented here consists of investigating and studying the electronic properties of anodic oxide film (SiO2). This study deals to the determination of interface states density Si/SiO2 and the study of electronic conduction. MOS capacitors with anodic oxides (9nm) were elaborated. The anodic silica films were produced by anodization of monocristalline silicon wafers in pure water in an electrolysis cell (P.T.F.E) at room temperature, with a constant current density of 20 μA/cm2. Film thickness increases linearly as a function of total charge during oxidation Using C(V),G(ω),I(V) measurements, we have determined the interface states density, fixed charges density and conduction mechanism which is of Fowler – Nordheim type for annealed oxides at various temperatures
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    Investigation and study of the electrical characteristics of anodic oxide films SiO2 annealed at various temperatures
    (Elsevier, 2007) Nadji, Bécharia
    The anodic silica films were produced by anodization of monocrystalline silicon wafers in pure water in an electrolysis cell (P.T.F.E), with a constant current density of 20 μA/cm2. All anodizations are performed at room temperature. During oxidation film thickness increases linearly as a function of total charge. Films were annealed under nitrogen atmosphere at various temperatures (600, 800 and 1050 °C). MOS capacitors with anodic oxides were elaborated. This study deals to the determination of interface states density Si/SiO2 and the study of electronic conduction. Using static, quasi-static, C(V), G(ω) measurements, we have determined the interface states density, fixed charges density for annealed oxides at various temperatures. The conduction mechanism was determined with I(V) measurements