Browsing by Author "Noual, Amina"

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Numerical study of T-GATE AlGaN/AlInGaN/GaN moshemt with single and double barrier for THZ frequency applications
(V. N. Karazin Kharkiv National University, 2023) Noual, Amina; Zitouni, Messai; Touati, Zine-Eddine; Saidani, Okba; Yousfi, Abderrahim
This paper presents a comprehensive investigation into the DC analog and AC microwave performance of a state-of-the-art T-gate double barrier AlGaN/AlInGaN/GaN MOSHEMT (Metal Oxide Semiconductor High Electron Mobility Transistor) implemented on a 4H-SiC substrate. The study involves meticulous numerical simulations and an extensive comparison with a single barrier design, utilizing the TCAD-Silvaco software. The observed disparity in performance can be attributed to the utilization of double barrier technology, which enhances electron confinement and current density by augmenting the polarization-induced charge during high-frequency operations. Remarkably, when compared to the single barrier design, the double barrier MOSHEMT exhibits a notable 15% increase in drain current, a 5% increase in transconductance, and an elevated breakdown voltage (VBR) of 140 V in E-mode operation. Furthermore, the radio frequency analysis of the double barrier device showcases exceptional performance, setting new records with a maximum oscillation frequency (fmax) of 1.148 THz and a gain cutoff frequency (ft) of 891 GHz. These impressive results obtained through deck-simulation affirm the immense potential of the proposed double barrier AlGaN/AlInGaN/GaN MOSHEMT for future applications in high-power and terahertz frequency domains.
RF Performance Analysis of Conventional and Recessed Gate AlGaN/GaN MOSHEMT using β–Ga 2 O 3 as Dielectric Layer
(2023) Noual, Amina; Messai, Zitouni; Touati, Zineeddine
Abstract—In this research paper, a novel heterostructure AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) is proposed, using an ultra-wide bandgap Oxide Gallium (β-Ga2O3) as dielectric layer growth on GaN substrate. The transfer and RF characteristics of the developed device with a recessed T-gate are compared with a conventional T-gate structure by using a two-dimensional (2D) simulation of the TCAD Silvaco Software at 300 K. A positive value of the threshold voltage VTH of 0.56 V and the highest peak transconductance (Gm, max) of 1.15 S/μm were achieved for 2 nm recess gate depth. A very small sub-threshold slope of 66mV/dec was reached. The microwave frequency performances of this device showed an outstanding result. The E-mode device exhibited a cut-off frequency (Ft) of 49 GHz, and a maximum frequency (Fmax) of 60 GHz while the MOSHEMT with conventional gate structure attained to only 38 GHz and 47 GHz respectively. The simulation results make this improved AlGaN/GaN MOSHEMT using a β-Ga2O3 as a dielectric layer suitable for high-frequency electronic applications.
Study of electrical and radio frequency properties of structures (IIIA-N) for filter applications for GNSS receivers
(Université M'Hamed Bougara Boumerdès : Faculté de Technologie, 2024) Noual, Amina; Zitouni, Messai(Directeur de thèse)
Satellite positioning and navigation systems (GNSS) are among the fastest-growing technologies of the 21st century. They face new challenges such as improving receiver sensitivity, acquiring precise positions, reducing production costs, and lowering energy consumption. To meet these challenges, current research is focusing on the use of high-quality high-frequency devices. Unfortunately, interference in GNSS receivers can arise either from the mixing of spurious harmonics from adjacent transmitters or from intentional interference. Consequently, in most GNSS receivers, the application of filtering is essential and must be applied to the RF input. The study in question is based on the design of an RF filtering block for the GNSS receiver, consisting of two bandpass filters (BPFs) and a low-noise amplifier (LNA). The basic element of the low-noise amplifier is the transistor, which largely determines the performance of the final block. To meet current and future challenges, a substitute for the silicon-based transistor is being considered. To date, transistors based on compounds in class IIIA-N of the Mendeleyev table have been presented as the most promising for radio frequency applications, thanks to their exceptional physical and electrical characteristics. Different AlGaN/GaN MOSHEMT (Metal-Oxide-Semiconductor High Electron Mobility Transistor) structures were investigated in this thesis using the TCAD SILVACO software, and finally, the AlGaN/AlInGaN/GaN MOSHEMT on 4H-SiC substrate was chosen for implementation in the single-stage LNA circuit. To this end, we are interested in the design of two filtering block (BPF + LNA + BPF), which operate in the two spectral bands used by the GNSS system: [1190 MHz -1300 MHz] and [1550 MHz -1610 MHz] using the ADS simulator. The first frequency band corresponds to the L2-GPS and L2-GLONASS signals. The second corresponds to the L1-GPS, B1-COMPASS and E1-GALILEO signals