Browsing by Author "Saidani, Okba"

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Effect of temperature on the performance of CGS/CIGS tandem solar cell
(2023) Elbar, Mourad; Tobbeche, Souad; Chala, Slimane; Saidani, Okba; Kateb, Mohamed Nadjib; Serdouk, Mohamed Redha
The CGS and CIGS being promising materials for large scale photovoltaic applications, the effect of temperature on the electrical parameters of a CGS/CIGS tandem solar cell has been investigated in this work. The copper gallium diselenide (CGS) and copper indium gallium diselenide (CIGS) structures as topcell and bottom-cell respectively, were numerically simulated under AM1.5G spectral illumination using the two-dimensional device simulator Silvaco-Atlas. The temperature dependency of the solar cell’s characteristics was investigated in the temperature range from 300 to 400 K at intervals of 20 K. The simulation results show the density current (Jsc) slightly increases whereas the open-circuit voltage (Voc) and fill factor (FF), conversion efficiency () decreases with the increase in temperature. The tandem cell operating temperature efficiency was found to be (– 0.34 %/K), which is slightly higher than that of CGS solar cell (– 0.29 %/K), but markedly better than that of CIGS solar cell (– 0.41 %/K)
Effect of Temperature on the Performance of CGS/CIGS Tandem Solar Cell
(Sumy State University, 2023) Elbar, Mourad; Tobbeche, Souad; Chala, Slimane; Saidani, Okba; Kateb, Mohamed Nadjib; Redha Serdouk, Mohamed
The CGS and CIGS being promising materials for large scale photovoltaic applications, the effect of temperature on the electrical parameters of a CGS/CIGS tandem solar cell has been investigated in this work. The copper gallium diselenide (CGS) and copper indium gallium diselenide (CIGS) structures as topcell and bottom-cell respectively, were numerically simulated under AM1.5G spectral illumination using the two-dimensional device simulator Silvaco-Atlas. The temperature dependency of the solar cell’s characteristics was investigated in the temperature range from 300 to 400 K at intervals of 20 K. The simulation results show the density current (Jsc) slightly increases whereas the open-circuit voltage (Voc) and fill factor (FF), conversion efficiency (ƞ) decreases with the increase in temperature. The tandem cell operating temperature efficiency was found to be (– 0.34 %/K), which is slightly higher than that of CGS solar cell (– 0.29 %/K), but markedly better than that of CIGS solar cell (– 0.41 %/K).
Numerical study of T-GATE AlGaN/AlInGaN/GaN moshemt with single and double barrier for THZ frequency applications
(V. N. Karazin Kharkiv National University, 2023) Noual, Amina; Zitouni, Messai; Touati, Zine-Eddine; Saidani, Okba; Yousfi, Abderrahim
This paper presents a comprehensive investigation into the DC analog and AC microwave performance of a state-of-the-art T-gate double barrier AlGaN/AlInGaN/GaN MOSHEMT (Metal Oxide Semiconductor High Electron Mobility Transistor) implemented on a 4H-SiC substrate. The study involves meticulous numerical simulations and an extensive comparison with a single barrier design, utilizing the TCAD-Silvaco software. The observed disparity in performance can be attributed to the utilization of double barrier technology, which enhances electron confinement and current density by augmenting the polarization-induced charge during high-frequency operations. Remarkably, when compared to the single barrier design, the double barrier MOSHEMT exhibits a notable 15% increase in drain current, a 5% increase in transconductance, and an elevated breakdown voltage (VBR) of 140 V in E-mode operation. Furthermore, the radio frequency analysis of the double barrier device showcases exceptional performance, setting new records with a maximum oscillation frequency (fmax) of 1.148 THz and a gain cutoff frequency (ft) of 891 GHz. These impressive results obtained through deck-simulation affirm the immense potential of the proposed double barrier AlGaN/AlInGaN/GaN MOSHEMT for future applications in high-power and terahertz frequency domains.