Browsing by Author "Zitouni, Messai"

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    Numerical study of T-GATE AlGaN/AlInGaN/GaN moshemt with single and double barrier for THZ frequency applications
    (V. N. Karazin Kharkiv National University, 2023) Noual, Amina; Zitouni, Messai; Touati, Zine-Eddine; Saidani, Okba; Yousfi, Abderrahim
    This paper presents a comprehensive investigation into the DC analog and AC microwave performance of a state-of-the-art T-gate double barrier AlGaN/AlInGaN/GaN MOSHEMT (Metal Oxide Semiconductor High Electron Mobility Transistor) implemented on a 4H-SiC substrate. The study involves meticulous numerical simulations and an extensive comparison with a single barrier design, utilizing the TCAD-Silvaco software. The observed disparity in performance can be attributed to the utilization of double barrier technology, which enhances electron confinement and current density by augmenting the polarization-induced charge during high-frequency operations. Remarkably, when compared to the single barrier design, the double barrier MOSHEMT exhibits a notable 15% increase in drain current, a 5% increase in transconductance, and an elevated breakdown voltage (VBR) of 140 V in E-mode operation. Furthermore, the radio frequency analysis of the double barrier device showcases exceptional performance, setting new records with a maximum oscillation frequency (fmax) of 1.148 THz and a gain cutoff frequency (ft) of 891 GHz. These impressive results obtained through deck-simulation affirm the immense potential of the proposed double barrier AlGaN/AlInGaN/GaN MOSHEMT for future applications in high-power and terahertz frequency domains.
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    RF performance analysis of conventional and recessed gate AlGaN/GaN MOSHEMT using β–Ga2O3 as dielectric layer
    (IEEE, 2023) Amina, Noual; Zitouni, Messai; Touati, Zineeddine
    In this research paper, a novel heterostructure AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) is proposed, using an ultra-wide bandgap Oxide Gallium(O−2Ga2O3) as dielectric layer growth on GaN substrate. The transfer and RF characteristics of the developed device with a recessed T-gate are compared with a conventional T-gate structure by using a two-dimensional (2D) simulation of the TCAD Silvaco Software at 300 K. A positive value of the threshold voltage V TH of 0.56 V and the highest peak transconductance (Gm,max) of 1.15 S/μm were achieved for 2 nm recess gate depth. A very small sub-threshold slope of 66mV/ dec was reached. The microwave frequency performances of this device showed an outstanding result. The E-mode device exhibited a cut-off frequency (Ft) of 49GHz, and a maximum frequency (Fmax) of 60GHz while the MOSHEMT with conventional gate structure attained to only 38GHz and 47GHz respectively. The simulation results make this improved AlGaN/GaN MOSHEMT using a β–Ga 2 O 3 as a dielectric layer suitable for high-frequency electronic applications