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Author: search.filters.author.Boubaaya, MohamedSubject: search.filters.subject.Metaloxide semiconductor field-effect transistor (MOSFETs)

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    Fast methods for studying the effect of electrical stress on SiO2 dielectrics in Metal-Oxide-Semiconductor Field-Effect transistors
    (Pleiades Publishing, 2023) Messaoud, Dhia Elhak; Djezzar, Boualem; Boubaaya, Mohamed; Chenouf, Amel; Benabdelmoumene, Abdelmadjid; Zatout, Boumediene; Zitouni, Abdelkader
    This work implements three fast measurement techniques based on the measure–stress–measure (MSM) method. These techniques, namely, measuring–around–, one–point on–the–fly (OTF), and pulsed current-voltage (PIV), were used to characterize three different technologies of metal–oxide–semiconductor field-effect transistors (MOSFETs) with same gate dielectric silicon–dioxide (SiO2) and various thicknesses = 20 nm, 4 nm, 2.3 nm. Moreover, well–configured electrical stress biasing has been performed to discuss the dielectric degradation of these devices using those characterization techniques. The pros and cons of the used techniques are well discussed based on our results. Furthermore, experimental results showed that threshold voltage shift () follows a power law time dependence with time exponent (n) being 0.16 for molecular hydrogen (H2) diffusing species and 0.25 for hydrogen atoms (H) diffusing species. We have found that the thicker the SiO2 dielectric the more the oxide traps () contribute to the resulting degradation. However, the dependency between SiO2 dielectric thickness and oxide traps could not be necessarily linear.
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    Metal-oxide-semiconductor field-effect transistor (MOSFET) pulsed current-voltage characterization technique: design and discussion
    (Pleiades Publishing, 2023) Messaoud, Dhia Elhak; Djezzar, Boualem; Boubaaya, Mohamed; Benabdelmoumene, Abdelmadjid; Zatout, Boumediene; Chenouf, Amel; Zitouni, Abdelkader
    In this paper, we implement the pulsed current–voltage (PIV) technique for the metal-oxide-semiconductor field-effect transistor (MOSFET) device’s ultrafast characterization based on the OpAmp amplifier OPA818. The latter dropped down the measurement time for a whole MOSFET characteristic to = 50 ns as an enhancement. Furthermore, a study concerning the technique’s dependency on measurement time (), channel length (), and channel width () is accomplished. It is found that the distortion in the technique’s results, labeled as hysteresis, is inversely proportional to measurement time and it increases dramatically with very low values of . Also, the results show that PIV could have a somehow direct proportionality to channel length, and it is justified by the gate/drain capacitance () effect. On the other hand, the technique shows no dependency on channel width at all. Moreover, as measurements limitations, the results couldn’t record drain currents less than ≈ 10–7 A, this makes PIV limited to the study of threshold voltage degradation () only. However, this issue is well discussed and solutions have been proposed.