Publications Scientifiques
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Item Study of the reliability of static converter for photovoltaic application(Elsevier, 2015) Khelifi, F.; Nadji, B.; Chelali, Y.Item Low magnetic field Impact on NBTI degradation(Elsevier, 2015) Merah, Sidi Mohammed; Nadji, B.; Tahi, H.Item Geometric component in constant-amplitude charge-pumping characteristics of LOCOS- and LDD-MOSFET devices(IEEE, 2011) Tahi, H.; Djezzar, B.; Benabdelmoumen, A.; Nadji, B.Item Fast and simple method for estimation and separation of radiation-induced traps in MOSFETs devices(IEEE, 2011) Nadji, B.; Tahi, H.; Djezzar, B.In this work, we propose a simple and fast method to estimate the radiation-induced traps in P and N-MOS transistors independently. This method is based on standard current-voltage and Charge Pumping (I(V)-CP) to separate the radiation-induced border-traps (N bt) and true interface-traps (N it), where the radiation-induced oxide-traps (N ot) are extracted classically by measuring the threshold voltage (V th) or Mid-Gap (V mg) voltage shift. The charge pumping (CP) curves are measured using the rise and fall saw-tooth signal for N-and P-MOS transistors respectively, to minimize the border-trap estimation error caused by the difference in the energy band gap scanned by standard I(V) and CP techniques. Emphasis is made on critical comparison between the radiation induced N bt extracted using I(V)-CP and classical method such as OTCP and DTBT. According to experimental data, the I(V)-CP method is more accurate than OTCP and DTBT methods, since it is more sensitive than OTCP method for the extraction of border traps and it can gives all kinds of traps for P and N-MOS transistors separatelyItem Harmonics compensation system based on photovoltaic generator(IEEE, 2012) Tadjer, S.A.; Habi, I.; Nadji, B.; Khelifi, F.Item Study of fault - tolerant inverter(IEEE, 2013) Khelifi, F.; Nadji, B.Item Study and simulation of active filtering of harmonic by method of synchronous reference frame(IEEE, 2013) Tadjer, S.A.; Habi, I.; Nadji, B.Item Application of the binary decision diagram (BDD) in the analysis of the reliability of the inverters(IEEE, 2013) Mahdi, Ismahan; Nadji, B.Item Radiation effect evaluation in effective short and narrow channels of LDD transistor with LOCOS isolation using OTCP method(2010) Tahi, H.; Djezzar, B.; Nadji, B.In this paper, we have presented a new methodology to take out the local oxidation of silicon (LOCOS) and lightly doped drain (LDD) subdiffusion effects from charge-pumping (CP) curves, leaving only the CP current of the effective channel, in narrow- and short-channel MOSFET transistors. First, we have clarified the contribution of LDD-subdiffusion and LOCOS regions to the CP characteristics by studying the spatial distributions of CP threshold and flatband voltages. We have shown that the maximum CP current is the contribution of pumped current in the effective-channel, LOCOS, and LDD-subdiffusion regions. Second, we have successfully used the oxide-trap CP (OTCP) to extract the radiation-induced oxide trap (??N ot) and interface trap (??N it) in effective short- and narrow-channel transistors. Finally, we have performed a comparison between the OTCP and the capacitance-versus-voltage methodItem Modeling and simulation of charge-pumping characteristics for LDD-MOSFET devices with LOCOS isolation(2010) Tahi, H.; Djezzar, B.; Nadji, B.We propose a model for the so-called constant-amplitude charge-pumping (CP) characteristics, giving the Elliot Gaussian-like CP current curve (ICP-VL) of lightly doped drain (LDD) MOSFET with local oxidation of silicon (LOCOS). This method is based on modulation of the contributing active-channel area (AG) to the ICP-VL curve, depending on the position of the high and low levels of the gate signal voltage. In addition, it allows to separate and clarify the contribution of all MOSFET regions (such as the effective channel, LDD, LOCOS, and LDD subdiffusion under the LOCOS) to the amount of ICP-VL curves. We have simulated this model and compared with experimental CP data. The model shows a very good correlation with experimental ICP-VL curves, particularly for transistors with short channel gate lengths (LG ≤ 1 μm). However, as the channel gate length increases, the model matches only for rising and falling ICP-VL curve edges, corresponding to the contribution of LDD and LOCOS regions, respectively. Moreover, we have demonstrated that the deviation, which was observed between the CP model and experimental data at the maximum plateau of ICP-VL characteristics, depends on the gate pulse fall time and vanishes for large fall time. This difference has been found to behave like a geometric component, since it depends on gate length and fall time and disappears for both short gate lengths and long fall times