Publications Scientifiques
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Item Characterization and simulation of the power IGBT module used in VFD for drilling applications(Springer, 2023) Sefsaf, H.; Nadji, B.; Yakhelef, YassineAt present, billions of dollars are being invested in the oil and gas industry, and the intellectual forces of many countries are working on the improvement of technology. In this connection, the problem arises of increasing the efficiency of capital investments [1]. One of the ways to improve the quality and increase profits is the use of drilling rigs equipped with a variable frequency drive (VFD) technology, which have proven themselves in operation at difficult climatic conditions. In pursuit of increased quality and profitability the VFD may hold the key to efficiently performing intricate and high-speed tasks and thus make complex wells technically and economically feasible [2]. The inverter module plays an important role in the Variable-Frequency Drive and the most important switching devices used in the inverter module are the IGBT & MOSFET. This paper focuses on the characterization and simulation of the power IGBT module used in VFD of drilling rigs. This characterization is based on the use of ANSYS solver Circuit - Simplorer©. This modeling is only linked to the knowledge of the IGBT characteristics obtained from datasheets. The comparison between the simulation models and the datasheet is reported and conclusions are madeItem Study of the reliability of static converter for photovoltaic application(Elsevier, 2015) Khelifi, F.; Nadji, B.; Chelali, Y.Item Low magnetic field Impact on NBTI degradation(Elsevier, 2015) Merah, Sidi Mohammed; Nadji, B.; Tahi, H.Item Geometric component in constant-amplitude charge-pumping characteristics of LOCOS- and LDD-MOSFET devices(IEEE, 2011) Tahi, H.; Djezzar, B.; Benabdelmoumen, A.; Nadji, B.Item Fast and simple method for estimation and separation of radiation-induced traps in MOSFETs devices(IEEE, 2011) Nadji, B.; Tahi, H.; Djezzar, B.In this work, we propose a simple and fast method to estimate the radiation-induced traps in P and N-MOS transistors independently. This method is based on standard current-voltage and Charge Pumping (I(V)-CP) to separate the radiation-induced border-traps (N bt) and true interface-traps (N it), where the radiation-induced oxide-traps (N ot) are extracted classically by measuring the threshold voltage (V th) or Mid-Gap (V mg) voltage shift. The charge pumping (CP) curves are measured using the rise and fall saw-tooth signal for N-and P-MOS transistors respectively, to minimize the border-trap estimation error caused by the difference in the energy band gap scanned by standard I(V) and CP techniques. Emphasis is made on critical comparison between the radiation induced N bt extracted using I(V)-CP and classical method such as OTCP and DTBT. According to experimental data, the I(V)-CP method is more accurate than OTCP and DTBT methods, since it is more sensitive than OTCP method for the extraction of border traps and it can gives all kinds of traps for P and N-MOS transistors separatelyItem Harmonics compensation system based on photovoltaic generator(IEEE, 2012) Tadjer, S.A.; Habi, I.; Nadji, B.; Khelifi, F.Item Study of fault - tolerant inverter(IEEE, 2013) Khelifi, F.; Nadji, B.Item Study and simulation of active filtering of harmonic by method of synchronous reference frame(IEEE, 2013) Tadjer, S.A.; Habi, I.; Nadji, B.Item Application of the binary decision diagram (BDD) in the analysis of the reliability of the inverters(IEEE, 2013) Mahdi, Ismahan; Nadji, B.Item Radiation effect evaluation in effective short and narrow channels of LDD transistor with LOCOS isolation using OTCP method(2010) Tahi, H.; Djezzar, B.; Nadji, B.In this paper, we have presented a new methodology to take out the local oxidation of silicon (LOCOS) and lightly doped drain (LDD) subdiffusion effects from charge-pumping (CP) curves, leaving only the CP current of the effective channel, in narrow- and short-channel MOSFET transistors. First, we have clarified the contribution of LDD-subdiffusion and LOCOS regions to the CP characteristics by studying the spatial distributions of CP threshold and flatband voltages. We have shown that the maximum CP current is the contribution of pumped current in the effective-channel, LOCOS, and LDD-subdiffusion regions. Second, we have successfully used the oxide-trap CP (OTCP) to extract the radiation-induced oxide trap (??N ot) and interface trap (??N it) in effective short- and narrow-channel transistors. Finally, we have performed a comparison between the OTCP and the capacitance-versus-voltage method