Publications Scientifiques

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Author: search.filters.author.Tadjer, Sid AhmedHas files: No

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    Optimizing Smart City Street Lighting: A Hybrid IoT-SAC Approach
    (Institute of Electrical and Electronics, 2025) Tercha, Wassila; Chekired, Fathia; Tadjer, Sid Ahmed; Canale, Laurent
    The confluence of artificial intelligence (AI) and the internet of things (IoT) is fast changing the concept of smart cities. Smart street lighting is only one example of the great opportunities this potent combination presents for enhancing urban infrastructure. While previous studies have looked into the possibility of combining IoT and Soft Actor-Critic (SAC) for this goal, this work takes a different tack. A simulated Internet of Things system that replicates real-world sensor data is used in our work. The SAC algorithm receives data from this system on variables like ambient light levels, weather, and vehicle and pedestrian traffic. The SAC algorithm modifies street light operation patterns and brightness dynamically within this controlled environment. This enables us to fine-tune the hybrid strategy so that it strikes a balance between user comfort and energy efficiency
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    An Analytical Approach for Evaluating Turn-On Switching Losses in SiC MOSFET With Kelvin Pin: Concept and Implementation
    (Institute of Electrical and Electronics Engineers Inc, 2024) Mohammed Cherif, okba; Nadji, Bouchra; Tadjer, Sid Ahmed; Bencherif, Hichem
    With the progressive adoption of silicon carbide (SiC) power devices in modern power converters, exploiting their superior efficiency, faster switching speed, and higher power density, an understanding of the factors influencing these properties becomes vital. One such critical factor is switching losses, which can drastically affect overall system performance. This study develops and presents a new analytical model for predicting the turn-on switching losses in SiC MOSFETs with Kelvin pin. The proposed model, derived from a carefully constructed set of nonlinear differential equations, accounts for the nonlinearity of the transconductance by incorporating a novel transfer characteristic model. The model also incorporates the nonlinear junction capacitances effects. The developed analytical model allows for the prediction and optimization of turn-on switching losses in SiC MOSFETs, thus enabling improved energy efficiency and reliability. The accuracy of the proposed model is verified through comparison with experimental results obtained using the double pulse test board that was designed and constructed, demonstrating its applicability for the investigation of SiC MOSFET power losses