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Author: search.filters.author.Zatout, BoumedieneSubject: search.filters.subject.MOSFET reliability

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    NBTI Fast Electrical Characterization in pMOSFET Devices
    (Université M'hamed Bougara de Boumerdès : Laboratory of Signals and Systems, 2021) Dhia Elhak, Messaoud; Djezzar, Boualem; Benabdelmoumene, Abdelmadjid; Boubaaya, Mohamed; Zatout, Boumediene; Zitouni, Abdelkader
    To measure the entire characteristic of p-MOSFET, we have implemented the fast Ids-Vgs technique. The latter is used to study NBTI phenomenon with measure-stress-measure method, for electric field 5MV/cm < Eox < 7.5MV/cm, and temperatures 27°C < Ts < 120°C. Measurement time has reached 10 us, and a stress-measure delay (switching time) of about a hundred of milliseconds was obtained. However, strengths and weaknesses of the implemented technique have been discussed. Furthermore, the extraction methods: transconductance (Gm), subthreshold slope (SS), and mid-gap (MG), have been implemented and discussed as well. NBTI parameter i.e. Delta Vth, n, gamma and Ea were extracted and compared to other results. A time exponent n of 0.149 has been touched. Activation energy Ea = 0.039 eV and a field factor gamma = 0.41 MV/cm for a stress time ts < 10 s have been obtained.
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    Fast Ids – Vgs technique implementation for NBTI characterization
    (IEEE, 2020) Dhia Elhak, Messaoud; Zitouni, Abdelkader; Djezzar, Boualem; Benabdelmoumene, Abdelmadjid; Zatout, Boumediene
    In this paper, we implemented the fast I ds - V gs technique to get the entire characteristic of p-MOSFET devices; as fast as possible. This technique is used within MSM protocol under NBTI conditions. We reached 10μs in measurement time; a stress-measure delay (switching time) of about a hundred of milliseconds was reached. However, strengths and weaknesses of the technique have been discussed. Furthermore, Transconductance (g m ), subthreshold slope (SS) and mid-gap (MG) methods have also been implemented and discussed. NBTI parameter i.e. ΔV th , n, y and E a are extracted and compared to other results. A time exponent n of 0.149 has been touched. Activation energy E a = 0.039 eV and a field factor y = 0.41 MV. cm -1 for a stress time t s <; 10s have been obtained