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    An Analytical Approach for Evaluating Turn-On Switching Losses in SiC MOSFET With Kelvin Pin: Concept and Implementation
    (Institute of Electrical and Electronics Engineers Inc, 2024) Mohammed Cherif, okba; Nadji, Bouchra; Tadjer, Sid Ahmed; Bencherif, Hichem
    With the progressive adoption of silicon carbide (SiC) power devices in modern power converters, exploiting their superior efficiency, faster switching speed, and higher power density, an understanding of the factors influencing these properties becomes vital. One such critical factor is switching losses, which can drastically affect overall system performance. This study develops and presents a new analytical model for predicting the turn-on switching losses in SiC MOSFETs with Kelvin pin. The proposed model, derived from a carefully constructed set of nonlinear differential equations, accounts for the nonlinearity of the transconductance by incorporating a novel transfer characteristic model. The model also incorporates the nonlinear junction capacitances effects. The developed analytical model allows for the prediction and optimization of turn-on switching losses in SiC MOSFETs, thus enabling improved energy efficiency and reliability. The accuracy of the proposed model is verified through comparison with experimental results obtained using the double pulse test board that was designed and constructed, demonstrating its applicability for the investigation of SiC MOSFET power losses
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    An Analytical Approach for Evaluating Turn-On Switching Losses in SiC MOSFET With Kelvin Pin: Concept and Implementation
    (IEEE, 2024) Okba, Mohammed Cherif; bouchra, Nadji; Tadjar, S A; Bencherif, Hichem
    With the progressive adoption of silicon carbide (SiC) power devices in modern power converters, exploiting their superior efficiency, faster switching speed, and higher power density, an understanding of the factors influencing these properties becomes vital. One such critical factor is switching losses, which can drastically affect overall system performance. This study develops and presents a new analytical model for predicting the turn-on switching losses in SiC MOSFETs with Kelvin pin. The proposed model, derived from a carefully constructed set of nonlinear differential equations, accounts for the nonlinearity of the transconductance by incorporating a novel transfer characteristic model. The model also incorporates the nonlinear junction capacitances effects. The developed analytical model allows for the prediction and optimization of turn-on switching losses in SiC MOSFETs, thus enabling improved energy efficiency and reliability. The accuracy of the proposed model is verified through comparison with experimental results obtained using the double pulse test board that was designed and constructed, demonstrating its applicability for the investigation of SiC MOSFET power losses.
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    Process and performance optimization of Triple-RESURF LDMOS with Trenched-Gate
    (Wiley, 2021) Houadef, Ali; Djezzar, Boualem
    In this article, we investigate by TCAD simulation, the combination triple reduced surface field (triple-RESURF) and trenched-gate to design an n-type laterally diffused metal-oxide-semiconductor (LDMOS) transistor with high performance. While similar structures reported in the literature, on the one hand, use either the triple-RESURF or trenched-gate at once, on the other hand, those features require at least one additional mask each. We have been able to achieve both features in one transistor with only eight masks at the front-end of line (FEOL), and one less annealing. Therefore, our proposition will be cheaper and provide better performance. The structure is obtained by re-organizing the process steps, re-using other existing masks, and exploiting positive and negative photoresist photolithography. The resulting specific on-state resistance (RON,SP) is 94 mΩmm2, and the breakdown voltage (BV) is 71 V. But, most importantly a high transconductance (gm) at high gate voltages, with acceptable off-state leakage current (Ioff), which translates into better RF performance overall than what is reported in the literature. The maximum oscillation frequency (fMAX) and cut-off frequency (fT) could reach up to 76 and 43 GHz, respectively. Our device targets fully integrated IoT ASICs that require power amplifiers