Browsing by Author "Messaoud, DhiaElhak"

Now showing 1 - 2 of 2

Contribution to the NBTI effect study in MOS devices
(Universite M'Hamed Bougara Boumerdès : Institut de Génie Eléctrique et Eléctronique, 2024) Messaoud, DhiaElhak; Djezzar, Boualem(Directeur de thèse)
This thesis delves into the Negative Bias Temperature Instability (NBTI) effect in Metal-OxideSemiconductor (MOS) devices, specifically Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs). The study comprehensively examines challenges posed by NBTI in the gate dielectric, impacting device parameters like threshold voltage. The research focuses on empirical work and advanced characterization techniques. This work highlights the significance of MOSFETs in electronic device development and emphasizes the imperative need for fast measurement techniques to accurately characterize NBTI. An overview explores MOS devices and NBTI, introducing technologies such as silicon oxy-nitride ( ) and high-K (HK) insulators. The exploration encompasses various NBTI models, delving into the response of classical and advanced MOS devices to NBTI. Also, the research unfolds in the experimental setup within the Characterization room with the Semiconductor Device Reliability team, outlining devices, technologies, instruments, software, and heating systems instrumental in the measurements. It introduces the fast pulsed currentvoltage (FPIV) technique using the OPA818 amplifier and the separated single pulse charge pumping (SSPCP) technique. Plus, it discusses experimental results gleaned through the implemented techniques, scrutinizing NBTI in MOSFETs with varying oxide thicknesses. It explores the enhanced FPIV technique and introduces the newly devised SSPCP technique, providing a nuanced perspective on interface traps along the MOSFET channel
Single pulse charge pumping technique improvement for interface-states profiling in the channel of MOSFET devices
(IEEE Transactions on Electron Devices, 2023) Messaoud, DhiaElhak; Djezzar, Boualem; Boubaaya, Mohamed; Benabdelmoumene, Abdelmadjid; Zatout, Boumediene; Chenouf, Amel; Zitouni, Abdelkader
This paper presents the separated single pulse charge pumping (SSPCP) technique, an improvement over conventional single pulse charge pumping (CSPCP) for analyzing metal oxide semiconductor field-effect transistor (MOSFET) degradation. SSPCP separates the measurement of source and drain currents (Is and Id ), enabling the localization of interface traps (Nit) near these regions. Experimental validation shows that SSPCP achieves comparable results to CSPCP with a maximum measurement error of 5%. The technique is particularly useful for studying stress-induced localized degradation profiling, allowing for the exploration of non-uniform stress (e.g., hot-carrier injection) and uniform stress (e.g., negative bias temperature instability) in transistors with short channels. SSPCP effectively analyzes localized degradation and identifies differences in stress-induced degradation between the source and drain regions, making it a valuable tool in semiconductor device characterization.