Browsing by Author "Toumi, S."

Filter results by typing the first few letters
Now showing 1 - 2 of 2
  • No Thumbnail Available
    Item
    Effect of temperature on the Fowler-Nordheim barrier height, flat band potentials and electron/hole effective masses in the MOS capacitors
    (Elsevier, 2020) Toumi, S.; Ouennoughi, Z.; Murakami, K.
    The current voltage characteristics versus temperature were measured in MOS (Metal Oxide Semiconductor) capacitor structures in the range of [303−423] K. These measurements were investigated by Fowler-Nordheim (FN) tunneling current characterized by the FN parameters like: the effective mass of the charge carrier in the oxide mox, the effective mass of the charge carrier in the semiconductor msc, the barrier height of the charge carriers ϕB and the corrected oxide voltage Vcorr. Our process enabled us a simultaneous extraction of the four FN parameters (mox, msc, ϕB, Vcorr) for each temperature by means of an optimization method using just these measured current-voltage curves. This parameters extraction made a possible study of mox, msc, ϕB and Vcorr evolution with the temperature. We have found a decrease of both mox and msc with the increase of temperature that could provide us with an oxide with a charge carrier of low effective mass
  • No Thumbnail Available
    Item
    Temperature analysis of the Gaussian distribution modeling the barrier height inhomogeneity in the Tungsten/4H-SiC Schottky diode
    (Springer, 2021) Toumi, S.; Ouennoughi, Z.; Weiss, R.
    The temperature dependence of the electrical properties of the Schottky barrier contact W/4H-SiC is studied in term of the Werner’s model assuming a Gaussian distribution of the barrier height to model the inhomogeneity of the Schottky interface. The Gaussian distribution is characterized by the parameters ϕ¯ B as a mean barrier height, ρ2, ρ3 as coefficients quantifying the barrier deformation and σs as a standard deviation. The effect of the series resistance Rs and its relation with the standard deviation σs is also reported. A vertical optimization process is used to extract simultaneously all the parameters cited above as function of temperature from the forward current–voltage (I-V) characteristics at temperatures ranging from 303 to 448 K. The temperature dependence of the characterized parameters of the W/4H-SiC Schottky structure enables us to quantify the inhomogeneity state of the Schottky barrier height prevailing at the MS interface in terms of those extracted parameters. © 2021, The Author(s), under exclusive licence to Springer-Verlag GmbH, DE part of Springer Nature