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Single Pulse Charge Pumping Technique Improvement for Interface-States Profiling in the Channel of MOSFET Devices
(2023) Messaoud, Dhia Elhak; Djezzar, Boualem; Boubaaya, Mohamed; Benabdelmoumene, Abdelmadjid; Zatout, Boumediene; Chenouf, Amel; Zitouni, Abdelkader
This paper presents the separated single pulse charge pumping (SSPCP) technique, an improvement over conventional single pulse charge pumping (CSPCP) for analyzing metal oxide semiconductor field-effect transistor (MOSFET) degradation. SSPCP separates the measurement of source and drain currents $({I}_{ {s}}$ and ${I}_{ {d}}$ ), enabling the localization of interface traps $({N}_{ {it}})$ near these regions. Experimental validation shows that SSPCP achieves comparable results to CSPCP with a maximum measurement error of 5%. The technique is particularly useful for studying stress-induced localized degradation profiling, allowing for the exploration of non-uniform stress (e.g., hot-carrier injection) and uniform stress (e.g., negative bias temperature instability) in transistors with short channels. SSPCP effectively analyzes localized degradation and identifies differences in stress-induced degradation between the source and drain regions, making it a valuable tool in semiconductor device characterization.