Publications Scientifiques

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Author: search.filters.author.Boubaaya, MohamedSubject: search.filters.subject.NBTI

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    NBTI Fast Electrical Characterization in pMOSFET Devices
    (Université M'hamed Bougara de Boumerdès : Laboratory of Signals and Systems, 2021) Dhia Elhak, Messaoud; Djezzar, Boualem; Benabdelmoumene, Abdelmadjid; Boubaaya, Mohamed; Zatout, Boumediene; Zitouni, Abdelkader
    To measure the entire characteristic of p-MOSFET, we have implemented the fast Ids-Vgs technique. The latter is used to study NBTI phenomenon with measure-stress-measure method, for electric field 5MV/cm < Eox < 7.5MV/cm, and temperatures 27°C < Ts < 120°C. Measurement time has reached 10 us, and a stress-measure delay (switching time) of about a hundred of milliseconds was obtained. However, strengths and weaknesses of the implemented technique have been discussed. Furthermore, the extraction methods: transconductance (Gm), subthreshold slope (SS), and mid-gap (MG), have been implemented and discussed as well. NBTI parameter i.e. Delta Vth, n, gamma and Ea were extracted and compared to other results. A time exponent n of 0.149 has been touched. Activation energy Ea = 0.039 eV and a field factor gamma = 0.41 MV/cm for a stress time ts < 10 s have been obtained.
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    Charge Pumping,GeometricComponent and Degradation ParametersExtraction in MOSFETDevices
    (IEEE, 2015) Tahi, Hakim; Tahanout, Cherifa; Djezzar, Boualem Djezzar; Boubaaya, Mohamed; Abdelmadjid, Benabdelmoumene; Chenouf, Amel
    In this paper, we model the geometric component of charge pumping technique (CP). Base on this proposed model, wehave established ananalyticequation for charge pumping current. This equation seems to be an universal one since it is in agreement with CP experimental data of different technologies devices.Instead the classical considerations regarding a parasitic nature of the geometric component, we have demonstrated, in this work, that it can be used to estimate the negative bias temperature (NBTI)induced mobility degradationusing the charge pumping basedmethods such as on-the-fly interface trap (OTFIT).