Charge Pumping,GeometricComponent and Degradation ParametersExtraction in MOSFETDevices

Abstract

In this paper, we model the geometric component of charge pumping technique (CP). Base on this proposed model, wehave established ananalyticequation for charge pumping current. This equation seems to be an universal one since it is in agreement with CP experimental data of different technologies devices.Instead the classical considerations regarding a parasitic nature of the geometric component, we have demonstrated, in this work, that it can be used to estimate the negative bias temperature (NBTI)induced mobility degradationusing the charge pumping basedmethods such as on-the-fly interface trap (OTFIT).