Publications Scientifiques

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    An Analytical Approach for Evaluating Turn-On Switching Losses in SiC MOSFET With Kelvin Pin: Concept and Implementation
    (Institute of Electrical and Electronics Engineers Inc, 2024) Mohammed Cherif, okba; Nadji, Bouchra; Tadjer, Sid Ahmed; Bencherif, Hichem
    With the progressive adoption of silicon carbide (SiC) power devices in modern power converters, exploiting their superior efficiency, faster switching speed, and higher power density, an understanding of the factors influencing these properties becomes vital. One such critical factor is switching losses, which can drastically affect overall system performance. This study develops and presents a new analytical model for predicting the turn-on switching losses in SiC MOSFETs with Kelvin pin. The proposed model, derived from a carefully constructed set of nonlinear differential equations, accounts for the nonlinearity of the transconductance by incorporating a novel transfer characteristic model. The model also incorporates the nonlinear junction capacitances effects. The developed analytical model allows for the prediction and optimization of turn-on switching losses in SiC MOSFETs, thus enabling improved energy efficiency and reliability. The accuracy of the proposed model is verified through comparison with experimental results obtained using the double pulse test board that was designed and constructed, demonstrating its applicability for the investigation of SiC MOSFET power losses
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    Efficiency comparison of silicon and silicon carbide MOSFETs in a PV system application
    (IEEE, 2023) Bouchetob, Elaid; Nadji, Bouchra; Mahdi, Ismahan
    This research includes a comparative assessment of the efficiency of DC-DC converters in a PV system that are based on silicon and silicon carbide Mosfets. The inquiry compares the two types of MOSFETs. The maximum power point tracking (MPPT) method is used to control the DC-DC converter, which receives electricity from a solar array with a 1 kW capacity. Along with being employed for the MPPT genetic algorithms, Matlab Simulink was used throughout the entire development of the solar array. After completing this stage, the next step involves using Ansys Simplorer to do a simulation of the MOSFETs. The last phase, which consisted of creating a Co-Simulation between Matlab/Simulink and Ansys Simplorer, has now been completed. In order to improve the efficiency of the system as a whole, we are able to switch out the Si Mosfets that are now being used in the PV application for SiC Mosfets. This is feasible because of the superior performance of SiC MOSFETs in terms of both response speed and the amount of energy lost in the process
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    Choosing the adapted artificial intelligence method (ANN and ANFIS) based MPPT controller for thin layer PV array
    (Springer, 2023) Bouchetob, Elaid; Nadji, Bouchra
    Because of the many advantages that artificial intelligence technologies provide in comparison to more conventional methods, a rising number of solar power plants are beginning to use them in their monitoring of the MPP. When there is a sudden change in solar temperature and irradiance, it is possible that the MPP will not be tracked as accurately. As a consequence of this, these methods could make up for the deficiencies of those that are more well-established (P&O, IC, etc.). Aside from that, there is a wide range of methods to AI, each of which has a particular advantage. By making some minor adjustments to the architecture, an artificial neural network (ANN) and an adaptive neuro-fuzzy inference system (ANFIS) were used to monitor the MPP of Thin Layer panel technology at the Oued Nechou installation in Ghardaia. Each connection channel now has six panels rather than the previous maximum of 12 panels, and the junction box has 210 channels rather than the prior maximum of 105 channels. In the last step, a DC-DC boost converter is used to increase the power output voltages produced by the module
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    Development and design of helmholtz coil for NBTI degradation studies
    (IEEE, 2017) Merah, Sidi Mohammed; Nadji, Bouchra
    Laboratory of Electrification of Industrials Enterprises (LREEI) of boumerdes and CDTA have developed an in-house Helmholtz coil. It will be used as a source of external magnetic field for studying the Negative Bias Temperature Instability (NBTI) degradation mechanisms that can influence Metal Oxide Semiconductor (MOS) devices. This paper describes the different phases of design and construction of a Helmholtz coil controlled by a computer. Structure geometry, number of turns in winding and power supply calculations were done. The two windings are connected in series and the magnetic field was measured at different points. The results obtained were satisfactory. The magnetic field is uniform over an approximate length of 22 cm