Publications Scientifiques

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    Boosting Reliability: A Comparative Study of Silicon Carbide (Sic) and Silicon (Si) in Boost Converter Design Using MIL-HDBK-217
    (J.J. Strossmayer University of Osijek , Faculty of Electrical Engineering, Computer Science and Information Technology, 2024) Bouchetob, Elaid; Nadji, Bouchra
    Reliability is very important in the world of electronic device design and production, particularly in applications where continuous and flawless performance is a necessity. This directs our attention to the boost converter, which forms the foundation of power electronics, renewable energy systems, and electric vehicles. However, as technology progresses, the choice of materials for these converters is a big challenge. For that, in this paper, the impact of using Silicon Carbide (SiC) devices, with their promising material properties, on the reliability of boost converters is presented. Because the results showed that more than 80% of boost converter failures are caused by semiconductors, the use of SiC materials is assessed by determining its reliability using MIL-HDBK-217 standard. In addition, a comparative study with the use of traditional Silicon (Si) is conducted. The results showed that the failure rate of boost converters based on SiC devices reduced from 8.335 failure/10-6h to 6.243 failure/10-6h. This notable shift in failure rates establishes SiC as a pivotal material in the evolution of boost converter technology, offering a compelling solution to address the persistent challenges associated with semiconductor-related failures.
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    An Analytical Approach for Evaluating Turn-On Switching Losses in SiC MOSFET With Kelvin Pin: Concept and Implementation
    (Institute of Electrical and Electronics Engineers Inc, 2024) Mohammed Cherif, okba; Nadji, Bouchra; Tadjer, Sid Ahmed; Bencherif, Hichem
    With the progressive adoption of silicon carbide (SiC) power devices in modern power converters, exploiting their superior efficiency, faster switching speed, and higher power density, an understanding of the factors influencing these properties becomes vital. One such critical factor is switching losses, which can drastically affect overall system performance. This study develops and presents a new analytical model for predicting the turn-on switching losses in SiC MOSFETs with Kelvin pin. The proposed model, derived from a carefully constructed set of nonlinear differential equations, accounts for the nonlinearity of the transconductance by incorporating a novel transfer characteristic model. The model also incorporates the nonlinear junction capacitances effects. The developed analytical model allows for the prediction and optimization of turn-on switching losses in SiC MOSFETs, thus enabling improved energy efficiency and reliability. The accuracy of the proposed model is verified through comparison with experimental results obtained using the double pulse test board that was designed and constructed, demonstrating its applicability for the investigation of SiC MOSFET power losses
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    Efficiency comparison of silicon and silicon carbide MOSFETs in a PV system application
    (IEEE, 2023) Bouchetob, Elaid; Nadji, Bouchra; Mahdi, Ismahan
    This research includes a comparative assessment of the efficiency of DC-DC converters in a PV system that are based on silicon and silicon carbide Mosfets. The inquiry compares the two types of MOSFETs. The maximum power point tracking (MPPT) method is used to control the DC-DC converter, which receives electricity from a solar array with a 1 kW capacity. Along with being employed for the MPPT genetic algorithms, Matlab Simulink was used throughout the entire development of the solar array. After completing this stage, the next step involves using Ansys Simplorer to do a simulation of the MOSFETs. The last phase, which consisted of creating a Co-Simulation between Matlab/Simulink and Ansys Simplorer, has now been completed. In order to improve the efficiency of the system as a whole, we are able to switch out the Si Mosfets that are now being used in the PV application for SiC Mosfets. This is feasible because of the superior performance of SiC MOSFETs in terms of both response speed and the amount of energy lost in the process
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    Choosing the adapted artificial intelligence method (ANN and ANFIS) based MPPT controller for thin layer PV array
    (Springer, 2023) Bouchetob, Elaid; Nadji, Bouchra
    Because of the many advantages that artificial intelligence technologies provide in comparison to more conventional methods, a rising number of solar power plants are beginning to use them in their monitoring of the MPP. When there is a sudden change in solar temperature and irradiance, it is possible that the MPP will not be tracked as accurately. As a consequence of this, these methods could make up for the deficiencies of those that are more well-established (P&O, IC, etc.). Aside from that, there is a wide range of methods to AI, each of which has a particular advantage. By making some minor adjustments to the architecture, an artificial neural network (ANN) and an adaptive neuro-fuzzy inference system (ANFIS) were used to monitor the MPP of Thin Layer panel technology at the Oued Nechou installation in Ghardaia. Each connection channel now has six panels rather than the previous maximum of 12 panels, and the junction box has 210 channels rather than the prior maximum of 105 channels. In the last step, a DC-DC boost converter is used to increase the power output voltages produced by the module
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    Contribution to The Reliability Study of Photovoltaic Systems Using Static and Dynamic Analysis Methods
    (Inderscience, 2019) Mahdi, Ismahan; Nadji, Bouchra; Simeu-Abazi, Zineb
    The study of reliability has not been received great attention from researchers, an estimation of a lifetime and why not improve enhance is still possible. For that, it is necessary to distinguish the different failure modes, their causes and their effects on solar modules, in our case composed by Silicon, the most spread technology and the most used in the production of electricity. In this article, we will present a contribution to the reliability study of photovoltaic systems. First, the study will be focused on the static analysis of our system by using: structured analysis and design technique and function analysis system technique methods, which make it possible to carry out a functional analysis of our system. Next, our study will be based on the dynamic analysis by using: failure mode, effects, and criticality analysis, fault tree analysis and finally stochastic Petri nets methods. These allow making a dysfunctional analysis of the system by introducing the ‘time’ which is a very important factor in our study
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    Development and design of helmholtz coil for NBTI degradation studies
    (IEEE, 2017) Merah, Sidi Mohammed; Nadji, Bouchra
    Laboratory of Electrification of Industrials Enterprises (LREEI) of boumerdes and CDTA have developed an in-house Helmholtz coil. It will be used as a source of external magnetic field for studying the Negative Bias Temperature Instability (NBTI) degradation mechanisms that can influence Metal Oxide Semiconductor (MOS) devices. This paper describes the different phases of design and construction of a Helmholtz coil controlled by a computer. Structure geometry, number of turns in winding and power supply calculations were done. The two windings are connected in series and the magnetic field was measured at different points. The results obtained were satisfactory. The magnetic field is uniform over an approximate length of 22 cm
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    Reliability study of a system dedicated to renewable energies by using stochastic petri nets : application to photovoltaic (PV) system
    (Elsevier, 2017) Mahdi, Ismahan; Chalah, Samira; Nadji, Bouchra
    Access to energy is essential to reduce poverty. Globally, around 1.2 billion people, about 16% of the global population, still do not have access to electricity. Knowing that photovoltaic (PV) energy already lengthily showed its evidence in terms of operation and reliability, its development observed an improvement of technologies in terms of solar energy transformation output by the semiconductor, and the research in this field does not cease to progress. However, reliability and availability study of PV systems have not been received great attention from researchers, for that we decided to give it a consideration in our research works. So, we seek to study the reliability of such system by using functional and dysfunctional analysis methods. In this paper, we will be interested in the two parts of PV system: “PV module” composed by Silicon cells, and “the converter” which is the expensive component and the most complex in a PV system