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    Single pulse charge pumping technique improvement for interface-states profiling in the channel of MOSFET devices
    (IEEE Transactions on Electron Devices, 2023) Messaoud, DhiaElhak; Djezzar, Boualem; Boubaaya, Mohamed; Benabdelmoumene, Abdelmadjid; Zatout, Boumediene; Chenouf, Amel; Zitouni, Abdelkader
    This paper presents the separated single pulse charge pumping (SSPCP) technique, an improvement over conventional single pulse charge pumping (CSPCP) for analyzing metal oxide semiconductor field-effect transistor (MOSFET) degradation. SSPCP separates the measurement of source and drain currents (Is and Id ), enabling the localization of interface traps (Nit) near these regions. Experimental validation shows that SSPCP achieves comparable results to CSPCP with a maximum measurement error of 5%. The technique is particularly useful for studying stress-induced localized degradation profiling, allowing for the exploration of non-uniform stress (e.g., hot-carrier injection) and uniform stress (e.g., negative bias temperature instability) in transistors with short channels. SSPCP effectively analyzes localized degradation and identifies differences in stress-induced degradation between the source and drain regions, making it a valuable tool in semiconductor device characterization.
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    Single Pulse Charge Pumping Technique Improvement for Interface-States Profiling in the Channel of MOSFET Devices
    (2023) Messaoud, Dhia Elhak; Djezzar, Boualem; Boubaaya, Mohamed; Benabdelmoumene, Abdelmadjid; Zatout, Boumediene; Chenouf, Amel; Zitouni, Abdelkader
    This paper presents the separated single pulse charge pumping (SSPCP) technique, an improvement over conventional single pulse charge pumping (CSPCP) for analyzing metal oxide semiconductor field-effect transistor (MOSFET) degradation. SSPCP separates the measurement of source and drain currents $({I}_{ {s}}$ and ${I}_{ {d}}$ ), enabling the localization of interface traps $({N}_{ {it}})$ near these regions. Experimental validation shows that SSPCP achieves comparable results to CSPCP with a maximum measurement error of 5%. The technique is particularly useful for studying stress-induced localized degradation profiling, allowing for the exploration of non-uniform stress (e.g., hot-carrier injection) and uniform stress (e.g., negative bias temperature instability) in transistors with short channels. SSPCP effectively analyzes localized degradation and identifies differences in stress-induced degradation between the source and drain regions, making it a valuable tool in semiconductor device characterization.
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    Oxide trap annealing by H2 cracking at e'center under NBTI stress
    (IEEE, 2012) Tahanout, Cherifa; Nadji, Becharia; Tahi, Hakim; Djezzar, Boualem; Benabdelmoumene, Abdelmadjid; Chenouf, Amel
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    Why is oxide-trap charge-pumping method appropriate for radiation-induced trap depiction in MOSFET?
    (2009) Djezzar, B.; Tahi, H.; Mokrani, A.
    Radiation-induced traps, which are generally identified using specific extraction methods, play an important role in the reliability of MOS devices. In this paper, the oxide-trap-based-on-charge-pumping (OTCP) method is used to estimate radiation-induced oxide, interface, and border traps in complementary N- and P-MOS transistors. We emphasize on the critical comparison between the OTCP and classical methods like subthreshold slope (STS), midgap (MG), capacitance-voltage (CV), dual-transistor CP (DTCP), and DT border trap (DTBT), giving a clear insight on the benefits and limitations of OTCP. According to experimental data, the OTCP method is often more accurate than the classical methods. On one side, OTCP offers more accurate densities of radiation-induced interface traps (DeltaN it) and border traps (DeltaN bt), while STS and MG overestimate DeltaN it because both interface and border traps are sensed like interface traps. On the other side, OTCP estimates DeltaN it, DeltaN bt, and oxide trap (DeltaN ot) for N- and P-MOSFETs separately, while DTCP and DTBT give average densities for whole N- and P-MOS devices. Finally, DeltaN ot obtained by OTCP is in excellent agreement with that given by CV. However, they show a slight discrepancy in the DeltaN it extraction