Oxide trap annealing by H2 cracking at e'center under NBTI stress
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Date
2012
Authors
Tahanout, Cherifa
Nadji, Becharia
Tahi, Hakim
Djezzar, Boualem
Benabdelmoumene, Abdelmadjid
Chenouf, Amel
Journal Title
Journal ISSN
Volume Title
Publisher
IEEE
Abstract
Description
Keywords
MOSFET, Annealing, Hole traps, Hydrogen, Negative bias temperature instability, Semiconductor device models, Semiconductor device reliability