Excellent Thermoelectric Performance in KBaTh (Th = Sb, Bi) Based Half-Heusler Compounds and Design of Actuator for Efficient and Sustainable Energy Harvesting Applications
No Thumbnail Available
Files
Date
2023
Journal Title
Journal ISSN
Volume Title
Publisher
MDPI
Abstract
To examine the structural, optoelectronic, thermodynamic, and thermoelectric properties
of KBaTh (Th = Sb, Bi) half-Heuslers, we used the full potential, linearized augmented plane wave
(FP_LAPW) approach as in the Wien2K simulator. Generalized gradient approximation (GGA),
technique, was used for the structural optimization. Mechanical stability and ductility were inherent
characteristics of the studied KBaTh (Th = Sb, Bi). Having band gaps of 1.31 eV and 1.20 eV for
the KBaTh (Th = Sb, Bi) compounds, they have a semiconducting character. The KBaTh (Th = Sb,
Bi) compounds are suggested for use in optoelectronic devices based on studies of their optical
characteristics. Thermoelectric properties were investigated using the Boltzmann transport provided
by the BoltzTraP software. Since the acquired figures of merit (ZT) values for the KBaTh (Th = Sb, Bi)
compounds are all almost equal to one at room temperature, this demonstrates that these substances
can be used in thermoelectric devices. Additionally, we used the Slack method to determine the lattice
thermal conductivity of KBaTh (Th = Sb, Bi). Our research shows that the half-Heusler compounds
under investigation increase actuator response time and hence can be considered as good materials
for actuators.
Description
Keywords
Actuator, Band gap, Coefficient of thermal conductivity, Figure of merit, Density of states, Half-Heusler, Loss function, Refractive index
