Analytical study on the temperature dependence of InGaN p–n junction solar cell under concentrated light intensity

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dc.contributor.authorMesrane, Abdelfettah
dc.contributor.authorMahrane, A.
dc.contributor.authorRahmoune, F.
dc.contributor.authorOulebsir, A.
dc.date.accessioned2017-02-19T11:21:43Z
dc.date.available2017-02-19T11:21:43Z
dc.date.issued2017
dc.identifier.issn0947-8396
dc.identifier.urihttps://dspace.univ-boumerdes.dz/handle/123456789/3311
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.relation.ispartofseriesApplied Physics A : Materials Science and Processing/ Vol.123, N°2 (2017)
dc.subjectSolar cellen_US
dc.subjectInGaN p–n junctionen_US
dc.subjectAnalyticalen_US
dc.titleAnalytical study on the temperature dependence of InGaN p–n junction solar cell under concentrated light intensityen_US
dc.typeArticleen_US

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