Investigation of NBTI degradation on power VDMOS transistors under magnetic field

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dc.contributor.authorTahi, Hakim
dc.contributor.authorBenmessai, Karim
dc.contributor.authorLe Floch, Jean Michel
dc.contributor.authorBoubaaya, Mohamed
dc.contributor.authorTahanout, Cherifa
dc.contributor.authorDjezzar, Boualem
dc.contributor.authorBENABDELMOMENE, Abdelmadjid
dc.contributor.authorGoudjil, Mohamed
dc.contributor.authorChenouf, Amel
dc.date.accessioned2021-01-20T12:31:07Z
dc.date.available2021-01-20T12:31:07Z
dc.date.issued2014
dc.description.abstractIn this paper, we report an experimental evidence of the impact of applied a low magnetic field (B<;100 Gauss) during negative bias temperature instability (NBTI) stress and recovery, on commercial power double diffused MOS transistor (VDMOS). We show that both interface (ΔN it ) and oxide trap (ΔN ot ) induced by NBTI stress decrease by applied magnetic field. This decrease is more pronounced as the magnetic field is high. In addition, the recovery of NBTI induced threshold voltage shift (ΔV th ) is relatively important with applied magnetic field.en_US
dc.identifier.otherINSPEC Accession Number: 14951793
dc.identifier.otherDOI: 10.1109/IIRW.2014.7049530
dc.identifier.urihttps://ieeexplore.ieee.org/document/7049530
dc.identifier.urihttps://dspace.univ-boumerdes.dz/handle/123456789/6188
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.subjectunder magnetic fielden_US
dc.subjectNBTI degradationen_US
dc.subjectpower VDMOSen_US
dc.titleInvestigation of NBTI degradation on power VDMOS transistors under magnetic fielden_US
dc.typeArticleen_US

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