Fast Ids – Vgs technique implementation for NBTI characterization
| dc.contributor.author | Dhia Elhak, Messaoud | |
| dc.contributor.author | Zitouni, Abdelkader | |
| dc.contributor.author | Djezzar, Boualem | |
| dc.contributor.author | Benabdelmoumene, Abdelmadjid | |
| dc.contributor.author | Zatout, Boumediene | |
| dc.date.accessioned | 2021-02-24T13:25:14Z | |
| dc.date.available | 2021-02-24T13:25:14Z | |
| dc.date.issued | 2020 | |
| dc.description.abstract | In this paper, we implemented the fast I ds - V gs technique to get the entire characteristic of p-MOSFET devices; as fast as possible. This technique is used within MSM protocol under NBTI conditions. We reached 10μs in measurement time; a stress-measure delay (switching time) of about a hundred of milliseconds was reached. However, strengths and weaknesses of the technique have been discussed. Furthermore, Transconductance (g m ), subthreshold slope (SS) and mid-gap (MG) methods have also been implemented and discussed. NBTI parameter i.e. ΔV th , n, y and E a are extracted and compared to other results. A time exponent n of 0.149 has been touched. Activation energy E a = 0.039 eV and a field factor y = 0.41 MV. cm -1 for a stress time t s <; 10s have been obtained | en_US |
| dc.identifier.uri | https://dspace.univ-boumerdes.dz/handle/123456789/6517 | |
| dc.language.iso | en | en_US |
| dc.publisher | IEEE | en_US |
| dc.relation.ispartofseries | 2020 International Conference on Electrical Engineering (ICEE);pp. 1-6 | |
| dc.subject | MOSFET reliability | en_US |
| dc.subject | Fast characterization | en_US |
| dc.subject | Extraction methods | en_US |
| dc.title | Fast Ids – Vgs technique implementation for NBTI characterization | en_US |
| dc.type | Other | en_US |