Numerical Simulation of Silicon Based Solar Cells with a Degenerated SnO2:F Window Layer

Abstract

The paper presents a numerical simulation of the behaviour of SnO{2}:F/Si(N+)/Si(P) solar cells. The simulation addresses in particular the question of the role of the window layer SnO{2}:F for the device performance. As beginning step, the transparent conductive oxide of SnO{2}:F must be modelled in order to introduce its parameters in simulation codes. Two approaches were employed: one empirical by collecting the experimental data of spray deposited SnO{2}:F while the second one is theoretical by using models of highly degenerate wide band gap semiconductors. The second step consists in injecting the deduced parameters of fluorine doped tin oxide in simulation codes. We use two well-known photovoltaic simulation codes as PC1D and SCAPS 2.5. A comparative study of the results of structures SnO{2}:F/Si(N+)/Si(P) and Si(N+)/Si(P) have been done with a confirmation in enhancing the conversion efficiency by SnO{2}:F window layer addition.