Three-dimensional study of the pressure field and advantages of hemispherical crucible in silicon Czochralski crystal growth

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dc.contributor.authorMokhtari, Faiza
dc.contributor.authorBouabdallah, Ahcene
dc.contributor.authorMerah, Abdelkrim
dc.contributor.authorZizi, M.
dc.contributor.authorHanchi, S.
dc.contributor.authorAlemany, A.
dc.date.accessioned2018-02-25T09:10:55Z
dc.date.available2018-02-25T09:10:55Z
dc.date.issued2010
dc.identifier.issn0232-1300
dc.identifier.urihttps://dspace.univ-boumerdes.dz/handle/123456789/4560
dc.language.isoenen_US
dc.publisherWileyen_US
dc.relation.ispartofseriesCrystal Research and Technology/ Vol.45, N°6 (2010);pp. 573-582
dc.subjectCrystal growthen_US
dc.subjectCzochralskien_US
dc.subjectSiliconen_US
dc.subjectModified geometryen_US
dc.subjectPressure fielden_US
dc.subjectFluent softwareen_US
dc.titleThree-dimensional study of the pressure field and advantages of hemispherical crucible in silicon Czochralski crystal growthen_US
dc.typeArticleen_US

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