Calculation of IGBT power losses and junction temperature in inverter drive

dc.contributor.authorBouzida, Ahcene
dc.contributor.authorAbdelli, Radia
dc.contributor.authorOuadah, M'hamed
dc.date.accessioned2018-11-21T11:51:33Z
dc.date.available2018-11-21T11:51:33Z
dc.date.issued2016
dc.description.abstractSeveral techniques for estimating power losses in insulated-gate bipolar transistors (IGBTs), diodes and MOSFETs are known. Most of the approaches in the literature deal with PWM switching technique. In this paper presents a feasible loss model to estimate IGBT losses in a switching operation. The loss model is coupled to RC (Foster) Network using the Thermal Impedance. This paper investigates the power losses in IGBT's and associated Diodes as a function of the circuit and the temperature variation during operation. A full presentation of the electro-thermal model has been developed and simulateden_US
dc.identifier.issn978-0-9567157-7-7
dc.identifier.urihttps://dspace.univ-boumerdes.dz/handle/123456789/5270
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.relation.ispartofseries8th International Conference on Modelling, Identification and Control (ICMIC);
dc.subjectInverteren_US
dc.subjectIGBTen_US
dc.subjectThermal Analysisen_US
dc.titleCalculation of IGBT power losses and junction temperature in inverter driveen_US
dc.typeArticleen_US

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